| 发明名称 |
Reduced leakage DRAM storage unit |
| 摘要 |
The present invention is directed to a memory cell which comprises a storage node, a switching device for controlling access to the storage node, and a diode between the switching device and the storage node. A method for controlling charge transfer to and from a storage node through a switching device is also disclosed.
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| 申请公布号 |
US6157565(A) |
申请公布日期 |
2000.12.05 |
| 申请号 |
US19990396666 |
申请日期 |
1999.09.15 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
WU, ZHIQIANG (JEFF);THAKUR, RANDHIR PS;REINBERG, ALAN;PRALL, KIRK |
| 分类号 |
G11C11/404;H01L27/108;(IPC1-7):G11C11/34 |
主分类号 |
G11C11/404 |
| 代理机构 |
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