| 摘要 |
PROBLEM TO BE SOLVED: To attain a high dynamic range while enhancing smear characteristics by increasing the quantity of charges being handled by a vertical CCD under a state where blooming tolerance is ensured. SOLUTION: The solid state imaging device 1 has a pixel region 11 formed on a semiconductor substrate 10 wherein the pixel region 11 includes a sensor region 21 performing photoelectric conversion of an incident light, a vertical CCD 23 formed on one side of the sensor region 21 through a read region 22, and a channel top region 25 formed on the side opposite to the sensor region 21 while sandwiching the vertical CCD 23. A vertical transfer electrode 27 is provided on the vertical CCD 23 through an insulating film 26. The vertical transfer electrode 27 is formed to have a width substantially identical to that of the channel region 24 of the vertical CCD 23 above the vertical CCD 23. COPYRIGHT: (C)2005,JPO&NCIPI
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