| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can realize highly precise optical detection. <P>SOLUTION: For example, in a configuration with which the regions other than light receiver 201 which is a partial region of a photodiode PD is covered by a light shading film such as a second layer of metal M2 and the like, incident light which leaks from the light receiver 201 to the underneath region of the light shading film through insulating films ISL1, ISL2 is shielded by contact layers CNT1b, CNT2a. For example, on viewing the substrate from top, the structure of the contact layer CNT1b and CNT2a is regarded as staggered pattern of contact hole forming the CNT1b, CNT2a allocation, and as wall-like form (continuous form toward Y axis) of the CNT1b, CNT2a. <P>COPYRIGHT: (C)2007,JPO&INPIT |
