| 摘要 |
The purpose of the invention is to prevent uneven irradiation of a non-single-crystal semiconductor film when irradiating the same with a pulse laser to cause crystallization. A crystal semiconductor film manufacturing method includes: a first step wherein a pulse laser is fired at an irradiation pulse energy density (E1) that is the same as an irradiation pulse energy density (E0), where E0 is an irradiation pulse energy density that is lower than the irradiation pulse energy density at which irradiation by the pulse laser causes micro-crystallization in the non-single-crystal semiconductor film and that is suited for crystallization caused by an N number of irradiations; and a second step wherein the pulse laser is fired at an irradiation pulse energy density (E2) that is lower than the irradiation pulse energy density (E1) and equal to or greater than the irradiation energy density required for the crystals to melt again. The total number of times the same surface is irradiated in the first step and the second step is set to N or more. |
