Semiconductor device with strained layer

摘要

A semiconductor device and method of fabricating thereof is described that includes a substrate including at least one fin, at least one gate stack formed on a top surface of the at least one fin, a first inter-layer dielectric (ILD) layer formed on the top surface of the at least one fin, and a strained layer formed at least on a top surface of the at least one gate stack, wherein the strained layer is configured to provide a strain force to the at least one gate stack.

主权项

1. A semiconductor device, comprising:
a substrate including at least one fin; at least one gate stack formed on a top surface of the at least one fin; a first inter-layer dielectric (ILD) layer formed on the top surface of the at least one fin; a strained insulating layer formed at least on and contacting a top surface of the at least one gate stack and a top surface of the first ILD layer, wherein the first ILD extends along and contacts a sidewall of the at least one fin, and wherein the first ILD further extends from a bottom surface of the strained insulating layer to a top surface of the substrate lower than the top surface of the at least one fin, wherein the strained insulating layer comprises germanium oxide; and a second ILD layer formed over the strained insulating layer, wherein the strained insulating layer is configured to provide a strain force to at least one channel region in the at least one fin underlying the at least one gate stack, respectively, and wherein the strained insulating layer is transformed from a pre-strained layer by a treatment through the second ILD layer.