Metal gate structure

摘要

The present disclosure provides a semiconductor structure, including a substrate, a metal gate, a dielectric layer, and an etch stop layer. The metal gate is positioned on the substrate and possesses a first surface. The dielectric layer surrounds the metal gate and possesses a second surface. The etch stop layer is in contact with both the first surface and the second surface. The first surface is higher than the second surface. The present disclosure also provides a method for manufacturing a semiconductor structure, including forming a dummy gate on a substrate; forming a second etch stop layer over the dummy gate; forming a dielectric layer over the dummy gate; replacing the dummy gate with a metal gate; etching back the dielectric layer to form a second surface of the dielectric layer lower than a first surface of the metal gate; and forming a first etch stop layer over the metal gate and the dielectric layer.

主权项

1. A semiconductor structure, comprising:
a substrate; a metal gate with a first surface, positioned on the substrate; and a dielectric layer with a second surface, surrounding the metal gate; and an etch stop layer at least over the metal gate and the dielectric layer, in contact with the first surface and the second surface, wherein the first surface is higher than the second surface.