发明名称 Semiconductor structure
摘要 A semiconductor device comprises a plurality of stacking blocks and a plurality of conductive lines. Each stacking blocks comprises two opposite finger VG structures. Each finger VG structure includes a staircase structure and a plurality of bit line stacks. The staircase structure is perpendicular to the bit line stacks, and the bit line stacks of the two opposite finger VG structures are arranged alternately. The conductive lines is disposed over the stacking blocks at interval. The direction of the conductive lines is parallel to a direction of the bit line stacks. The conductive lines include a plurality of bit lines and a plurality of ground lines, and each stacking block includes at least one ground line.
申请公布号 US9368507(B2) 申请公布日期 2016.06.14
申请号 US201314093072 申请日期 2013.11.29
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 Chen Shih-Hung
分类号 H01L27/105;H01L27/115;G11C16/04 主分类号 H01L27/105
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. A semiconductor structure, comprises: a substrate; a plurality of bit line stacks disposed on the substrate and arranged along a first direction, wherein each of the bit line stacks extends along a second direction perpendicular to the first direction; and a plurality of conductive lines, disposed on and parallel with the bit line stacks, wherein the conductive lines are parallel to each other and are spaced apart at a fixed interval, wherein the conductive lines include a plurality of bit lines and a plurality of ground lines, and the conductive lines are electrically connected to the bit line stacks.
地址 Hsinchu TW