发明名称 SUBSTRATE COMPRISING EMBEDDED ELONGATED CAPACITOR
摘要 A substrate that includes a first dielectric layer and a capacitor embedded in the first dielectric layer. The capacitor includes a first terminal, a second terminal, and a third terminal. The second terminal is laterally located between the first terminal and the third terminal. The capacitor also includes a second dielectric layer, a first metal layer and a second metal layer. The first metal layer is coupled to the first and third terminals. The first metal layer, the first terminal, and the third terminal are configured to provide a first electrical path for a first signal. The second metal layer is coupled to the second terminal. The second metal layer and the second terminal are configured to provide a second electrical path for a second signal.
申请公布号 US2016183378(A1) 申请公布日期 2016.06.23
申请号 US201414579651 申请日期 2014.12.22
申请人 QUALCOMM Incorporated 发明人 Hwang Kyu-Pyung;Song Young Kyu
分类号 H05K1/18;H05K1/02;H05K3/46;H01G4/012;H05K3/40;H01G4/30;H01G4/248;H05K1/11;H05K3/30 主分类号 H05K1/18
代理机构 代理人
主权项 1. A substrate comprising: a first dielectric layer; and a capacitor embedded in the first dielectric layer, the capacitor comprising: a first terminal;a second terminal;a third terminal, wherein the second terminal is laterally located between the first terminal and the third terminal;a second dielectric layer;a first metal layer in the second dielectric layer, the first metal layer coupled to the first and third terminals, the first metal layer, the first terminal, and the third terminal configured to provide a first electrical path for a first signal; anda second metal layer in the second dielectric layer, the second metal layer coupled to the second terminal, the second metal layer and the second terminal configured to provide a second electrical path for a second signal.
地址 San Diego CA US
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