发明名称 |
Metal oxide protective layer for a semiconductor device |
摘要 |
Embodiments related to metal oxide protective layers formed on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor are provided. In one example, a method for forming a metal oxide protective layer is provided. The example method includes forming a metal-including active species on the halogen-sensitive metal-including layer, the metal-including active species being derived from a non-halogenated metal oxide precursor. The example method also includes reacting an oxygen-containing reactant with the metal-including active species to form the metal oxide protective layer. |
申请公布号 |
US9384987(B2) |
申请公布日期 |
2016.07.05 |
申请号 |
US201414571126 |
申请日期 |
2014.12.15 |
申请人 |
ASM IP Holding B.V. |
发明人 |
Jung Sung-Hoon |
分类号 |
H01L21/316;H01L21/28;H01L29/51;H01L21/02;C23C16/40;C23C16/455 |
主分类号 |
H01L21/316 |
代理机构 |
Snell & Wilmer LLP |
代理人 |
Snell & Wilmer LLP |
主权项 |
1. A method of forming a metal oxide protective layer on a surface of a halogen-sensitive metal-including layer present on a substrate processed in a semiconductor processing reactor, the method comprising the steps of:
providing a halogen-sensitive metal-including layer present on a substrate; forming a metal oxide protective layer overlying the halogen-sensitive metal-including layer, the metal oxide protective layer derived from a non-halogenated metal oxide precursor; and forming a high-k dielectric metal-including film overlaying the metal oxide protective layer by exposing the metal oxide protective layer to a halogen-including metal compound. |
地址 |
Almere NL |