Nanowire devices

摘要

A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.

主权项

1. A method for forming a nanowire device, the method comprising:
forming a semiconductor nanowire between a first support and a second support; forming a stressor layer circumferentially surrounding the semiconductor nanowire, wherein, due to the stressor layer, the nanowire is subjected to radial strain; wherein the stressor layer is formed by forming a preliminary layer on the nanowire; processing the preliminary layer to activate the preliminary layer to apply stress to the nanowire; and forming a fixation layer over the preliminary layer prior the processing of the preliminary layer to substantially maintain an outer surface geometry of the preliminary layer, wherein the fixation layer comprises TaN, formed by atomic layer deposition (ALD), at a thickness of about 10 nm.