| 发明名称 | Trench filling method and processing apparatus | ||
| 摘要 | The present disclosure provides a method for filling a trench formed on an insulating film of a workpiece. The method includes forming a first impurity-containing amorphous silicon film on a wall surface which defines the trench, forming a second amorphous silicon film on the first amorphous silicon film, and annealing the workpiece after the second amorphous silicon film is formed. | ||
| 申请公布号 | US9384974(B2) | 申请公布日期 | 2016.07.05 |
| 申请号 | US201414285874 | 申请日期 | 2014.05.23 |
| 申请人 | TOKYO ELECTRON LIMITED | 发明人 | Suzuki Daisuke;Takahashi Kazuya;Okada Mitsuhiro;Komori Katsuhiko;Onodera Satoshi |
| 分类号 | H01L21/02 | 主分类号 | H01L21/02 |
| 代理机构 | Nath, Goldberg & Meyer | 代理人 | Nath, Goldberg & Meyer ;Meyer Jerald L. |
| 主权项 | 1. A method for filling a trench formed on an insulating film of a workpiece, the method comprising: forming a first impurity-containing amorphous silicon film on a wall surface which defines the trench; forming a second amorphous silicon film on the first amorphous silicon film; and filling the trench with an amorphous silicon by melting the second amorphous silicon film to flow toward a bottom portion of the trench, by annealing the workpiece after the second amorphous silicon film is formed with the first impurity-containing amorphous silicon film intact on the wall surface. | ||
| 地址 | Tokyo JP | ||