| 发明名称 | Polycrystallization method | ||
| 摘要 | According to one embodiment, provided is a polycrystallization method for polycrystallizing an amorphous semiconductor film that has a natural oxide film on the surface. The polycrystallization method includes a step of cleaning the natural oxide film while leaving the natural oxide film on the surface of the amorphous semiconductor film, and a step of polycrystallizing the amorphous semiconductor film in the state where the natural oxide film is left. | ||
| 申请公布号 | US9384965(B2) | 申请公布日期 | 2016.07.05 |
| 申请号 | US201414540458 | 申请日期 | 2014.11.13 |
| 申请人 | Japan Display Inc. | 发明人 | Ito Naoya;Jinnai Toshihide;Mizukoshi Hirofumi |
| 分类号 | H01L21/20;H01L21/02;H01L27/12 | 主分类号 | H01L21/20 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A polycrystallization method for polycrystallizing an amorphous semiconductor film that has a natural oxide film on the surface, comprising: cleaning the natural oxide film while leaving the natural oxide film on the surface of the amorphous semiconductor film; and polycrystallizing the amorphous semiconductor film in the state where the natural oxide film is left by excimer laser annealing treatment in which the atmospheric oxygen concentration is 500 ppm or less. | ||
| 地址 | Minato-ku JP | ||