Threshold voltage expansion

摘要

Embodiments including systems, methods, and apparatuses associated with expanding a threshold voltage window of memory cells are described herein. Specifically, in some embodiments memory cells may be configured to store data by being set to a set state or a reset state. In some embodiments, a dummy-read process may be performed on memory cells in the set state prior to a read process. In some embodiments, a modified reset algorithm may be performed on memory cells in the reset state. Other embodiments may be described or claimed.

主权项

1. An apparatus comprising:
a plurality of memory cells, wherein individual memory cells of the plurality of memory cells are configured to store one or more bits of data; and a bias logic coupled with the individual memory cells, the bias logic to:
apply a dummy-read voltage to the plurality of memory cells, to return the plurality of memory cells that are in a set state to a voltage pre-drift state;apply, subsequent to application of the dummy-read voltage, a read voltage to the plurality of memory cells;apply a voltage bias pulse to a subset of the plurality of memory cells in a reset state, as a result of the application of the read voltage, to accelerate a voltage drift of the memory cells in the reset state.