| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a process for electron beam exposure employing a character projection (CP) method that can enable highly precise charged particle beam exposure in carrying out the charged particle beam exposure employing the CP method. <P>SOLUTION: The process for the electron beam exposure includes: a step of providing an aperture mask having a plurality of character apertures (S10); a step of correcting the dimension of a design pattern in design data in consideration of at least any one of elements of a forward scattering distance or backward scattering distance of charged particles, beam blur, a beam distance affected by an acid diffusion distance in a resist, and a pattern dimension difference resulting from the roughness and density of patterns that results when a substrate layer is processed (S11); a step of assigning at least a part of specific character apertures out of a plurality of character apertures to the corrected design pattern to generate graphic data (S12 to S14); and a step of exposing the resist to a charged particle beam that has passed through at least a part of the specific character apertures, on the basis of the graphic data (S15). <P>COPYRIGHT: (C)2007,JPO&INPIT |
