| 摘要 |
PROBLEM TO BE SOLVED: To provide an art of reducing thermal stress to a semiconductor element which is caused by a difference between thermal expansion coefficients of the semiconductor element and a lead frame.SOLUTION: A semiconductor device 10 includes a first lead frame 2 and a semiconductor element 6. The semiconductor element 6 is bonded to the first lead frame 2 via a first bond layer 4 composed of metal having hardness higher than that of the first lead frame 2. The first lead frame 2 has a first thin part 2a with a thickness adjusted to be thinner. One principal surface of the semiconductor element 6 is bonded to the first thin part 2a.SELECTED DRAWING: Figure 1 |
