Reactive curing process for semiconductor substrates

摘要

In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500° C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber.

主权项

1. A method for semiconductor processing, comprising:
providing a plurality of semiconductor substrates in a hot wall, batch process chamber of a vertical furnace, wherein the semiconductor substrates are held in a wafer boat; exposing the semiconductor substrates in the process chamber to an ambient containing H2O2; and providing a pressure in the process chamber at about 300 Torr or below while exposing the substrate.