ALUMINUM NITRIDE SINTERED COMPACT

摘要

PROBLEM TO BE SOLVED: To provide a susceptor in which particles are hardly generated by preventing the deterioration of grain boundary strength to the utmost.

SOLUTION: In the aluminum nitride sintered compact, the content of cadmium and phosphorus is controlled to be equal to or below a fixed value, that is the content of cadmium in the aluminum nitride sintered compact comprising aluminum nitride as an essential component is controlled to be ≤150 ppm and the content of phosphorus is controlled to be ≤100 ppm in the aluminum nitride sintered compact. It is preferable that a resistive heating element is formed on the aluminum nitride sintered compact and the aluminum nitride sintered compact is used as a part for heating a semiconductor.

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