Image sensors having reduced interference between pixels

摘要

An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column direction, and second pixels and a second source follower transistor, which are formed in a second pixel area adjacent to the first pixel area in a row direction by the same number of the first pixels, wherein when the first pixels share the first source follower transistor and the second pixels share the second source follower transistor, while pixels selected from the same row are activated, the first source follower transistor and the second source follower transistor being activated are disposed so that locations thereof have a diagonal symmetry.

主权项

1. An image sensor, comprising:
a first column of pixels that includes a first pixel and a second pixel that are adjacent each other in a column direction; a first source follower transistor that is shared by the first pixel and the second pixel; a second column of pixels that includes a third pixel and a fourth pixel that are adjacent each other in the column direction, the second column of pixels being adjacent the first column of pixels so that the first and third pixels form a first row in a row direction that is substantially perpendicular to the column direction and the second and fourth pixels form a second row in the row direction; a second source follower transistor that is shared by the third pixel and the fourth pixel, wherein the first source follower transistor is diagonally spaced apart from the second source follower transistor with respect to an array defined by the first and second rows and the first and second columns, wherein the first source follower transistor is disposed below the second pixel and the second source follower transistor is disposed above the third pixel or the first source follower transistor is disposed above the first pixel and the second source follower transistor is disposed below the fourth pixel.