Epitaxial growth between gates

摘要

An integrated circuit device includes at least two epitaxially grown active regions grown onto a substrate, the active regions being placed between two gate devices. The device further includes at least one dummy gate between two epitaxially grown active regions. Each active region is substantially uniform in length.

主权项

1. An integrated circuit device comprising:
a plurality of parallel, epitaxially grown fin structures comprising active regions, the fin structures grown onto a substrate, the fin structures being placed between two gate devices; and at least one dummy gate between the two gate devices and between at least two of the plurality of epitaxially grown fin structures; wherein each fin structure is substantially uniform in length; and wherein at least two of the plurality of epitaxially grown fin structures extend from a same one of the gate devices to the at least one dummy gate without extending directly below one of the gate devices.