Integrated circuit structure with substrate isolation and un-doped channel

摘要

The present disclosure provides a semiconductor structure. The semiconductor structure includes a fin structure formed on a substrate; a gate stack formed over the fin structure; source/drain regions over the substrate and disposed on opposing sides of the gate stack; a channel region defined in the fin structure and underlying the gate stack, wherein the channel region is un-doped; and a buried isolation layer disposed vertically between the channel region and the substrate, wherein the buried isolation layer includes a compound semiconductor oxide.

主权项

1. A semiconductor device comprising:
a fin structure formed on a substrate; a gate stack formed over the fin structure; source/drain regions over the substrate and disposed on opposing sides of the gate stack; a channel region defined in the fin structure and underlying the gate stack, wherein the channel region is un-doped; a buried isolation layer disposed vertically between the channel region and the substrate, wherein the buried isolation layer includes a compound semiconductor oxide, and wherein the buried isolation layer has a first thickness within the channel region and extends to the source/drain regions with a second thickness less than the first thickness; and a semiconductor material layer disposed on the buried isolation layer within the source/drain regions.