Semiconductor devices including channel dopant layer

摘要

A semiconductor device includes a semiconductor substrate including a well dopant layer having a first conductivity type, a gate electrode on the well dopant layer, a channel dopant layer in the well dopant layer and spaced apart from a top surface of the semiconductor substrate, a channel region between the gate electrode and the channel dopant layer, and source/drain regions in the well dopant layer at both sides of the gate electrode. The channel dopant layer and the channel region have the first conductivity type. The source/drain regions have a second conductivity type. A concentration of dopants having the first conductivity type in the channel dopant layer is higher than a concentration of dopants having the first conductivity type in the channel region. The semiconductor device may be used in a sense amplifier of a memory device.

主权项

1. A semiconductor device comprising:
a semiconductor substrate including a well dopant layer having a first conductivity type; a gate electrode on the well dopant layer; a channel dopant layer in the well dopant layer and spaced apart from a top surface of the semiconductor substrate, the channel dopant layer having the first conductivity type; a channel region between the gate electrode and the channel dopant layer, the channel region having the first conductivity type; and source/drain regions in the well dopant layer at both sides of the gate electrode, the source/drain regions having a second conductivity type, wherein a concentration of dopants having the first conductivity type in the channel dopant layer is higher than a concentration of dopants having the first conductivity type in the channel region, wherein each of the source/drain regions comprises: an upper portion adjacent to the channel region; and a lower portion adjacent to the channel dopant layer, and wherein a dopant concentration of the upper portion is substantially equal to a dopant concentration of the lower portion.