Patternable dielectric film structure with improved lithography and method of fabricating same

摘要

A method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating. The inorganic antireflective coating is vapor deposited and contains atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La. At least one interconnect pattern is then formed within the at least one patternable low-k material. Next, the at least one patternable low-k material containing the at least one interconnect pattern is cured.

主权项

1. A method of fabricating an interconnect structure comprising:
providing an inorganic antireflective coating atop a substrate, said inorganic antireflective coating is vapor deposited and comprises atoms of M, C and H, wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La; depositing at least one patternable low-k material on a surface of said inorganic reflective coating, wherein said at least one patternable low-k material comprises a composition of a functionalized polymer, and a photoacid generator, wherein said functionalized polymer comprises a carbosilane or an oxycarbosilane and contains one or more irradiation/acid sensitive imageable groups; forming at least one interconnect pattern within said at least one patternable low-k material, said at least one interconnect pattern is formed without utilizing a separate photoresist material; and curing said at least one patternable low-k material to provide a dielectric material, said dielectric having a dielectric constant of not more than 4.3, and wherein said curing is performed after forming said at least one interconnect pattern into said at least one patternable low-k material.