| 发明名称 |
Method of Forming a Semiconductor Substrate With Buried Cavities and Dielectric Support Structures |
| 摘要 |
A semiconductor device includes a semiconductor substrate with a first surface. The device further includes one or more semiconductor devices formed or the first surface in an active area. The device further includes a plurality of cavities in the semiconductor substrate beneath the first surface. The device further includes dielectric support structures between each of the cavities and spaced apart from the first surface. The dielectric support structures support a part of the semiconductor substrate between the active area and the cavities. The dielectric support structures include an oxide. |
| 申请公布号 |
US2016322386(A1) |
申请公布日期 |
2016.11.03 |
| 申请号 |
US201615209206 |
申请日期 |
2016.07.13 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Laven Johannes;Dainese Matteo;Schulze Hans-Joachim |
| 分类号 |
H01L27/12;H01L23/528;H01L21/311;H01L21/02;H01L21/762;H01L29/06;H01L23/00 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising;
a semiconductor substrate with a first surface; one or more semiconductor devices formed on the first surface in an active area; a plurality of cavities in the semiconductor substrate beneath the first surface; and dielectric support structures between each of the cavities and spaced apart from the first surface, the dielectric support structures supporting a part of the semiconductor substrate between the active area and the cavities, wherein the dielectric support structures comprise an oxide. |
| 地址 |
Neubiberg DE |
