| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A method for manufacturing a semiconductor device according to the present invention includes: (a) disposing, on a substrate (insulating substrate), a bonding material having a sheet shape and having sinterability; (b) disposing a semiconductor element on the bonding material after the (a); and (c) sintering the bonding material while applying pressure to the bonding material between the substrate and the semiconductor clement. The bonding material includes particles of Ag or Cu, and the particles are coated with an organic film. |
| 申请公布号 |
US2016322327(A1) |
申请公布日期 |
2016.11.03 |
| 申请号 |
US201514959139 |
申请日期 |
2015.12.04 |
| 申请人 |
Mitsubishi Electric Corporation |
发明人 |
HINO Yasunari;KAWABATA Daisuke |
| 分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device, comprising:
(a) disposing, on a substrate, a bonding material having a sheet shape and having sinterability; (b) disposing a semiconductor element on said bonding material after said (a); and (c) sintering said bonding material while applying pressure to said bonding material between said substrate and said semiconductor element, wherein said bonding material includes only particles of one of Ag, Au, Pd, Pt, or Cu or other noble metal, and said particles are coated with an organic film. |
| 地址 |
Tokyo JP |
