发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process. |
申请公布号 |
US2016322303(A1) |
申请公布日期 |
2016.11.03 |
申请号 |
US201615210623 |
申请日期 |
2016.07.14 |
申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
FU GUANGCAI;YANG TIANLUN;ZHANG XIAOPING |
分类号 |
H01L23/528;H01L21/02;B81C1/00;B81B7/00;H01L29/06;H01L23/532 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Shanghai CN |