METHOD OF SILICON TARGET MAKING BY MEANS OF CURRENTLESS CHEMICAL PLATING

摘要

The solution falls within the area of production method of vidicon equipped on one side with a system of photodiodes covered by a mosaic of mutually de-insulated isles of semiconductive layer, usually made of polycrystalline silicon. The problem of difficult setting of the specific resistance of the isles, if they are produced of either polycrystalline or amorphous silicon or other semiconductive materials, is solved by an overlay of the semiconductive layer by a metal layer of Ni isles by means of de-energized chemical metal plating in the bath of the following composition:38 g/l Ni(H2PO2)2 . 6H2O, i.e. nickel hypophosphite,50 g/l NH4Cl, i.e. ammonium chloride,65 g/l (NH4)3C6H5O7, i.e. ammonium citrate,6 g/l C2H2N2(CH2COOH)4, i.e. ethylenediaminetetraacetic acid,40 ml/l 25 percent NH4OH, i.e. 25 percent solution of ammonium hydroxide with added distilled water to up to 1 litre.