发明名称 |
Method for forming a silicon oxide film on a silicon waffer |
摘要 |
Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.
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申请公布号 |
US5395645(A) |
申请公布日期 |
1995.03.07 |
申请号 |
US19920928070 |
申请日期 |
1992.08.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KODERA, MASAKO;WATASE, MASAMI;MISHIMA, SHIRO;OKUMURA, KATSUYA |
分类号 |
C01B33/12;H01L21/00;H01L21/316;(IPC1-7):B05D1/00 |
主分类号 |
C01B33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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