| 摘要 |
PURPOSE:To provide a light emitting and receiving device capable of practically satisfying both a light receiving function and a light emitting function. CONSTITUTION:A Zn-diffused region 12 with a small diffusion depth Xj12 and a Zn-diffused region 14 with a larger diffusion depth Xj14 are provided away from each other without concatenation on an n-GaAsP substrate 10. The regions 12 and 14 are ohmic-connected to a common p-side electrode 16. The shallow Zn-diffused region 12 has planar spreading, and has the diffusion depth Xj12 which is uniform over the entire spreading. By setting the diffusion depth Xj12 to 0.3-2mum, a practical light current can be provided. The deeper Zn-diffused region 14 has planar spreading, and has the diffusion depth Xj14 which is uniform over the entire spreading. By setting the diffusion depth Xj14 to 4-7mum, practical light emission intensity can be provided. |
