| 摘要 |
<P>PROBLEM TO BE SOLVED: To make it possible to form CMOS on one and the same chip in a semiconductor device for photo detection which has a PIN photo diode in a light receiver. <P>SOLUTION: In a semiconductor substrate wherein an epitaxial layer 82 is stacked on a P-sub layer 80, the light receiver 62 and a signal processing circuit 66 are formed. The PIN photo diode is comprised of the P-sub layer 80 as an anode and the epitaxial layer 82 between a cathode region 72 and the P-sub layer 80 as an i-layer. In the signal processing circuit 66, a p-well 84 is formed on the boundary between an n-well 86 forming the CMOS and the epitaxial layer 82. <P>COPYRIGHT: (C)2007,JPO&INPIT |
