METHOD FOR MANUFACTURING SEMICONDUCTOR SILICON EPITAXIAL WAFER AND SEMICONDUCTOR DEVICE

摘要

A method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device by which a gettering ability can be given to an epitaxial wafer in which the formation of BMD is not able to be expected in both low- and high-temperature device manufacturing processes, with the manufacturing processes being lower and higher than 1,050 DEG C in temperature, and has a specific resistance of >/= 10m OMEGA .cm. When this method is used, such BMD that is sufficient to obtain gettering can be formed in both the low- and high-temperature processes, with the manufacturing processes being lower and higher than 1,050 DEG C in temperature, even in the epitaxial wafer having a specific resistance of >/= 10 m OMEGA .cm by performing low-temperature heat treatment at 650 SIMILAR 900 DEG C before starting epitaxial film formation, by selecting the heat-treating time in accordance with the process temperature in the device manufacturing processes and heavy-metal contaminants which are mixed in during the device manufacturing processes can be gettered sufficiently. Therefore, the characteristic deterioration of a device can be prevented and the yield of the device can be improved. <IMAGE>