| 摘要 |
PROBLEM TO BE SOLVED: To improve degradation after treatment of sulfide by providing an optical blocking part which blocks light incidence to vicinities of the ends of a semiconductor. SOLUTION: An n-electrode 1 is formed on a substrate 20, and AlGaAs layers 2-4 which have different contents are formed on the n-electrode 1. An undisordered active layer 5 is formed on the surface of the AlGaAs layer 3, a disordered active layer 6 is formed surrounding the active layer 5. A diffraction grating 7 is formed in the AlGaAs layer 4. An insulating layer 8 is formed by covering the side and the surface excluding the top face of the projected port of the AlGaAs layer 4. A shielding film 10 is formed on both ends of the semiconductor laser by being insulated with a groove 11 in between from a p-electrode. The shielding film 11 functions as a film preventing light from intruding into laser. As a result, generation of flaws on the end surface can be restrained by treatment of sulfide due to suppression of generation of a carrier caused by light, thereby a semiconductor laser having no degradation can be obtained.
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