| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable semiconductor device, where stresses do not concentrate partially and wire breakings or cracks are hard to occur in the wiring pattern, even if stress is added to the wiring pattern. SOLUTION: In a semiconductor device, where a first insulating film 18 is made at the face of a semiconductor chip 12 where an electrode 14 is made, exposing the electrode 14 of the semiconductor chip 12, and a wiring pattern 20 connected to the electrode 14 of the semiconductor chip 12 is made on the first insulating film 18, and a second insulating film 22 is made on the wiring pattern 20, exposing a land part 20a of the wiring pattern 20, the planar shape of the land part 20a is made in a tear drop shape. |
