| 摘要 |
A power amplifier that provides wide-band, high efficiency, high voltage, HF power amplification over a large dynamic operating range. In one embodiment, the power amplifier includes a driver amplifier, an intermediate power amplifier comprising a coherently combined array of two transistors, and a final power amplifier comprising a coherently combined array of multiple transistors. The two stage driver amplifier drives the intermediate power amplifier, which drives the final power amplifier. Preferably, because of the inherent linearity, dynamic range, and power limiting requirements, the driver amplifier includes two transistor devices that are of the silicon power bipolar type, operating in class A with classic common-emitter circuit configuration. Preferably, the transistors used in the intermediate power amplifier and the final power amplifier are MOSFETS operating in a non-classic DC grounded-drain, RF common source circuit configuration.
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