METHOD OF MANUFACTURING III NITRIDE BASE COMPOUND SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To manufacture a large-area III nitride base compound semiconductor substrate with a satisfactory yield and satisfactory reproducibility. SOLUTION: First, a first semiconductor film 13 that is formed of a first III nitride based compound semiconductor having a stepped portion 13c is formed on a substrate 11 (Fig. b). Thereafter, a second semiconductor film 14a composed of a second III nitride based compound semiconductor having a thermal expansion coefficient that is different from that of the first III nitride based compound semiconductor is formed (Fig. c). Thereafter, the substrate 11 is cooled, and the second semiconductor film 14a is isolated from the first semiconductor film 13 to obtain the III nitride based compound semiconductor substrate 14.