发明名称 Program circuit of semiconductor
摘要 A semiconductor integrated circuit device includes a storage element, program circuit, and sensing circuit. The storage element stores information by electrically irreversibly changing the element characteristics. The program circuit programs the storage element by electrically irreversibly changing its element characteristics. The sensing circuit senses the irreversibly changed element characteristics of the storage element in distinction from an unchanged state. The program circuit includes a high-voltage generator which irreversibly changes the element characteristics of the storage element by applying a high voltage to it, and a current source which supplies an electric current to the storage element having element characteristics changed by the high-voltage generator, thereby stabilizing the element characteristics.
申请公布号 US2006193163(A1) 申请公布日期 2006.08.31
申请号 US20060360670 申请日期 2006.02.24
申请人 ITO HIROSHI 发明人 ITO HIROSHI
分类号 G11C11/24 主分类号 G11C11/24
代理机构 代理人
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