| 摘要 |
In an embodiment, a semiconductor memory device has a small number of repair signal transmission lines. The semiconductor memory device includes m repair redundancy blocks, each including n repair redundant word lines, and m and n being natural numbers; and a control circuit generating n repair information signals to select the n repair redundant word lines and m block selection information signals to select the m repair redundancy blocks, and transmitting the n repair information signals and the m block selection information signals to the m repair redundancy blocks. The n repair information signals are shared by the m repair redundancy blocks. The control circuit includes nxm unit fuse boxes, n unit fuse boxes of which corresponding to each of the m repair redundancy blocks.
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