Temperature ramping using gas distribution plate heat

摘要

A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck. The cyclical etching includes remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature. Etching the dielectric layer generates etch byproducts. The cyclical etching also includes vertically moving the substrate towards a gas distribution plate in the etching processing chamber, and flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts. The sublimation is performed at a second temperature, wherein the second temperature is greater than the first temperature.

主权项

1. A method for etching a dielectric layer disposed on a substrate, comprising:
de-chucking the substrate from an electrostatic chuck having the substrate disposed thereon in an etching processing chamber; and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck, wherein the cyclical etching comprises:
remotely generating a plasma from an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature, wherein etching the dielectric layer generates etch byproducts;vertically moving the substrate towards a gas distribution plate in the etching processing chamber; andflowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts at a second temperature, wherein the second temperature is greater than the first temperature.