Method for fabricating electronic devices having semiconductor memory unit

摘要

Devices and methods based on disclosed technology include, among others, an electronic device including silicide layers capable of effectively reducing contact resistance in the electronic device including buried gates and a method for fabricating the electronic device. Specifically, an electronic device in one implementation includes a plurality of buried gates formed in a substrate and silicide layers formed over the substrate between the buried gates and protruding upwardly from the buried gates.

主权项

1. A method for fabricating an electronic device having a semiconductor memory unit, comprising:
forming isolation layers to define active regions in a substrate; forming a plurality of trenches in a substrate; forming gate electrodes, each burying each of the trenches; forming sealing layers, each burying the remaining trench; recessing the sealing layers and the isolation layers to produce protruding portions in the substrate of the active regions; and transforming the protruding portions into silicide layers.