发明名称 Charge storage device, method of making same, method of making an electrically conductive structure for same, mobile electronic device using same, and microelectronic device containing same
摘要 In one embodiment a charge storage device includes first (110) and second (120) electrically conductive structures separated from each other by a separator (130). At least one of the first and second electrically conductive structures includes a porous structure containing multiple channels (111, 121). Each one of the channels has an opening (112, 122) to a surface (115, 125) of the porous structure. In another embodiment the charge storage device includes multiple nanostructures (610) and an electrolyte (650) in physical contact with at least some of the nanostructures. A material (615) having a dielectric constant of at least 3.9 may be located between the electrolyte and the nanostructures.
申请公布号 US9368290(B2) 申请公布日期 2016.06.14
申请号 US201514644632 申请日期 2015.03.11
申请人 Intel Corporation 发明人 Gardner Donald S.;Hannah Eric C.;Chen Rong;Gustafson John
分类号 H01G11/26;H01G11/36;H01G11/86;H01G9/048;H01G2/02;H01G11/52;H01G11/54;H01L49/02 主分类号 H01G11/26
代理机构 代理人 Nelson Kenneth A.
主权项 1. A charge storage device comprising: a plurality of discrete nanostructures; and an electrolyte in physical contact with at least some of the discrete nanostructures, wherein: at least some of the nanostructures are coated with a monolayer of mercury on a surface of the nanostructures;the mercury prevents an electrochemical reaction between the nanostructures and the electrolyte; andthe discrete nanostructures are formed from a material selected from the group comprising silicon, silicon-germanium (SiGe), and a III-V compound.
地址 Santa Clara CA US