发明名称 SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF
摘要 A semiconductor memory device includes a memory cell array including a plurality of memory cells, a peripheral circuit performing a program pulse applying operation and a verify operation on the memory cell array, a pass/fail check circuit performing a pass/fail check operation on a program operation including the program pulse applying operation and the verify operation, and a control logic controlling the peripheral circuit and the pass/fall check circuit to perform the pass/fail check operation during the program pulse applying operation.
申请公布号 US2016172050(A1) 申请公布日期 2016.06.16
申请号 US201514697419 申请日期 2015.04.27
申请人 SK hynix Inc. 发明人 JOO Byoung In
分类号 G11C16/34;G11C16/14;G11C16/26 主分类号 G11C16/34
代理机构 代理人
主权项 1. A semiconductor memory device, comprising: a memory cell array including a plurality of memory cells; a peripheral circuit suitable for performing a program pulse applying operation and a verify operation on the memory cell array; a pass/fail check circuit suitable for performing a pass/fail check operation on a program operation including the program pulse applying operation and the verify operation; and a control logic suitable for controlling the peripheral circuit and the pass/fail check circuit to perform the pass/fail check operation during the program pulse applying operation.
地址 Gyeonggi-do KR