发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF |
摘要 |
A semiconductor memory device includes a memory cell array including a plurality of memory cells, a peripheral circuit performing a program pulse applying operation and a verify operation on the memory cell array, a pass/fail check circuit performing a pass/fail check operation on a program operation including the program pulse applying operation and the verify operation, and a control logic controlling the peripheral circuit and the pass/fall check circuit to perform the pass/fail check operation during the program pulse applying operation. |
申请公布号 |
US2016172050(A1) |
申请公布日期 |
2016.06.16 |
申请号 |
US201514697419 |
申请日期 |
2015.04.27 |
申请人 |
SK hynix Inc. |
发明人 |
JOO Byoung In |
分类号 |
G11C16/34;G11C16/14;G11C16/26 |
主分类号 |
G11C16/34 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor memory device, comprising:
a memory cell array including a plurality of memory cells; a peripheral circuit suitable for performing a program pulse applying operation and a verify operation on the memory cell array; a pass/fail check circuit suitable for performing a pass/fail check operation on a program operation including the program pulse applying operation and the verify operation; and a control logic suitable for controlling the peripheral circuit and the pass/fail check circuit to perform the pass/fail check operation during the program pulse applying operation. |
地址 |
Gyeonggi-do KR |