发明名称 Electron beam exposure apparatus
摘要 An electron beam exposure apparatus comprising: column 1 for irradiating an electron beam to wafer 10 serving as a sample; sample chamber 3 having vacuum pump 40 as a vacuum exhaustion unit for controlling the internal unit to a vacuum atmosphere; stage 4 A arranged in the sample chamber 3 for holding and moving the wafer 10; and first mounting 5 A for elastically supporting the column 1 with respect to the sample chamber 3.
申请公布号 US7230257(B2) 申请公布日期 2007.06.12
申请号 US20050074645 申请日期 2005.03.09
申请人 CANON KABUSHIKI KAISHA 发明人 UCHIDA SHINJI
分类号 G03F7/20;H01J37/304;G21K5/10;H01J37/02;H01J37/16;H01J37/20;H01J37/30;H01J37/317;H01L21/027;H01L21/68 主分类号 G03F7/20
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