发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 A method for fabricating a semiconductor device is provided to control penetration of moisture from an interface to a semiconductor device by increasing the adhesion of at least two flexible substrates composed of an organic compound layer, adhesive made of an organic compound, and an organic compound. A delamination layer(102) is formed on a substrate(101). An inorganic insulation layer(103) is formed on the delamination layer. A device formation layer(104) having an organic compound layer is formed on the inorganic insulation layer. A first flexible substrate(106) is attached to the device formation layer. The substrate is removed to expose the inorganic insulation layer. A part of the inorganic insulation layer is eliminated, the inorganic insulation layer is divided into a plurality of portions, and a part of the organic compound layer of the device formation layer is exposed. A second flexible substrate(115) is attached to the divided inorganic insulation layer and the exposed part of the organic compound layer of the device formation layer. The first and second flexible substrates are cut in a region from which the inorganic insulation layer is removed. An organic resin layer is formed between the device formation layer and the first flexible substrate.
申请公布号 KR20070058314(A) 申请公布日期 2007.06.08
申请号 KR20060112562 申请日期 2006.11.15
申请人 SEMICONDUCTOR ENERGY LABORATORY K.K. 发明人 YAMADA DAIKI
分类号 H01L21/30;H01L21/314 主分类号 H01L21/30
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