发明名称 |
Gas coupled probe for substrate temperature measurement |
摘要 |
A low pressure temperature sensor for measuring the temperature of a substrate during semiconductor device manufacturing is generally described. Various embodiments describe a gas chamber having an opening disposed within a dielectric plate of a platen with a seal disposed around the opening in the gas chamber such that the opening in the gas chamber may be sealed against the substrate. Furthermore, a temperature sensor and a spring are disposed in the gas chamber, the spring biased to place the temperature sensor in contact with the substrate. Additionally, a gas source configured to pressurize the gas chamber with a low pressure gas in order to increase thermal conductivity between the substrate and the temperature sensor is provided. |
申请公布号 |
US9417138(B2) |
申请公布日期 |
2016.08.16 |
申请号 |
US201314022682 |
申请日期 |
2013.09.10 |
申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Krampert Jeffrey E.;Fish Roger B. |
分类号 |
G01K13/00;G01K1/14 |
主分类号 |
G01K13/00 |
代理机构 |
|
代理人 |
|
主权项 |
1. An assembly for measuring the temperature of a substrate during a semiconductor manufacturing processing comprising:
a temperature sensor for measuring the temperature of a substrate; a gas chamber configured to be disposed entirely on a backside of the substrate, the gas chamber having an opening and being disposed around the temperature sensor; a seal disposed around the opening in the gas chamber, the seal configured to seal the opening in the gas chamber against the substrate; and a spring disposed within the gas chamber, the spring biased to place the temperature sensor in contact with the substrate. |
地址 |
Gloucester MA US |