发明名称 Gas coupled probe for substrate temperature measurement
摘要 A low pressure temperature sensor for measuring the temperature of a substrate during semiconductor device manufacturing is generally described. Various embodiments describe a gas chamber having an opening disposed within a dielectric plate of a platen with a seal disposed around the opening in the gas chamber such that the opening in the gas chamber may be sealed against the substrate. Furthermore, a temperature sensor and a spring are disposed in the gas chamber, the spring biased to place the temperature sensor in contact with the substrate. Additionally, a gas source configured to pressurize the gas chamber with a low pressure gas in order to increase thermal conductivity between the substrate and the temperature sensor is provided.
申请公布号 US9417138(B2) 申请公布日期 2016.08.16
申请号 US201314022682 申请日期 2013.09.10
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Krampert Jeffrey E.;Fish Roger B.
分类号 G01K13/00;G01K1/14 主分类号 G01K13/00
代理机构 代理人
主权项 1. An assembly for measuring the temperature of a substrate during a semiconductor manufacturing processing comprising: a temperature sensor for measuring the temperature of a substrate; a gas chamber configured to be disposed entirely on a backside of the substrate, the gas chamber having an opening and being disposed around the temperature sensor; a seal disposed around the opening in the gas chamber, the seal configured to seal the opening in the gas chamber against the substrate; and a spring disposed within the gas chamber, the spring biased to place the temperature sensor in contact with the substrate.
地址 Gloucester MA US