发明名称 THIN FILM TRANSISTOR ARRAY AND MANUFACTURING METHOD OF THE SAME
摘要 A thin film transistor array including a substrate, thin film transistors each including a gate electrode formed on the substrate, a source electrode, a drain electrode, a semiconductor layer formed between the source electrode and the drain electrode, an interlayer insulation film formed on the drain electrode, and an upper pixel electrode formed on the interlayer insulation film, and an insulation layer having light shielding property is formed between adjacent upper pixel electrodes.
申请公布号 US2016358988(A1) 申请公布日期 2016.12.08
申请号 US201615242726 申请日期 2016.08.22
申请人 TOPPAN PRINTING CO., LTD. 发明人 Matsubara Ryohei
分类号 H01L27/32;H01L51/56 主分类号 H01L27/32
代理机构 代理人
主权项 1. A thin film transistor array, comprising: a substrate; a plurality of thin film transistors each including a gate electrode formed on the substrate, a source electrode, a drain electrode, a semiconductor layer formed between the source electrode and the drain electrode, an interlayer insulation film formed on the drain electrode, and an upper pixel electrode formed on the interlayer insulation film; and an insulation layer having light shielding property is formed between adjacent upper pixel electrodes.
地址 Taito-ku JP