FinFETs with Different Fin Heights

摘要

An integrated circuit structure includes a semiconductor substrate including a first portion in a first device region, and a second portion in a second device region. A first semiconductor fin is over the semiconductor substrate and has a first fin height. A second semiconductor fin is over the semiconductor substrate and has a second fin height. The first fin height is greater than the second fin height.

主权项

1. A method comprising:
forming a first fin extending above a substrate, an isolation region surrounding the first fin, the first fin extending above a top surface of the isolation region by a first depth; forming a gate stack on a top surface and sidewalls of the first fin; recessing the isolation region outside of the gate stack to a second depth using the gate stack as a mask; and epitaxially growing a semiconductor layer on the top surface and sidewalls of the first fin.