| 发明名称 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
| 摘要 |
A substrate processing apparatus includes a vacuum chamber and a turntable provided in the vacuum chamber. The turntable includes a substrate receiving area formed in a surface along a circumferential direction thereof. An etching area is provided at a predetermined area along the circumferential direction of the turntable. An etching gas supply unit is provided in the etching area so as to face the surface of the turntable and including gas discharge holes arranged extending in a radial direction of the turntable. A reaction energy decrease prevention unit configured to prevent a decrease in etching reaction energy in an outer area of the turntable in the etching area is provided. |
| 申请公布号 |
US2016358794(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201615158788 |
申请日期 |
2016.05.19 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
MIURA Shigehiro |
| 分类号 |
H01L21/67;H01L21/311;H01J37/32;H01L21/02 |
主分类号 |
H01L21/67 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate processing apparatus comprising:
a vacuum chamber; a turntable provided in the vacuum chamber and including a substrate receiving area formed in a surface along a circumferential direction thereof; an etching area provided at a predetermined area along the circumferential direction of the turntable; an etching gas supply unit provided in the etching area that faces the surface of the turntable and includes gas discharge holes arranged to extend in a radial direction of the turntable; and a reaction energy decrease prevention unit configured to prevent a decrease in etching reaction energy in an outer area of the turntable in the etching area. |
| 地址 |
Tokyo JP |
