发明名称 |
SOLID-STATE IMAGE PICKUP DEVICE |
摘要 |
A semiconductor substrate (1) of a solid-state image pickup device is provided with a plurality of photosensitive cells arranged in matrix with a photodiode on each, and a peripheral driving circuit which has a plurality of transistors and drives the photosensitive cells. As the transistors, a first transistor having a first diffusion layer (2) as a source or a drain to which a signal potential corresponding to a signal charge generated by the photodiode is transmitted to be held, and a second transistor having a second diffusion layer as a source and a drain to which the signal potential is not transmitted. An edge interval (D1) between an edge of a metal silicide layer (4) formed on the surface of the first diffusion layer of the first transistor and an edge of a gate electrode (6) is larger than an edge interval between an edge of a metal silicide layer formed on the surface of the second diffusion layer of the second transistor and the edge of a gate electrode. A leak current at the transistor of the peripheral driving circuit is suppressed, and picked up image information can be highly accurately held.
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申请公布号 |
KR20070063045(A) |
申请公布日期 |
2007.06.18 |
申请号 |
KR20077011329 |
申请日期 |
2007.05.18 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
UCHIDA MIKIYA;MIMURO KEN;OCHI MOTOTAKA |
分类号 |
H01L27/146;H04N5/335;H04N5/357;H04N5/369;H04N5/374;H04N5/3745;H04N5/376;H04N101/00 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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