| 摘要 |
PURPOSE:To improve electric reliability of upper layer interconnection in an interconnecting member having a multilayer interconnection structure by forming a coated type second insulating film only on a recess except a protrusion formed of lower layer interconnection of a deposited type first insulating film. CONSTITUTION:An insulating film 4B of an intermediate layer of interlayer insulating film 4 is formed on a whole board surface on an insulating film 4A. The film 4B is formed of a silicon oxide film coated by a SOG method. This silicon oxide film is made of organic material mixed with methyl group. The silicon oxide film coated by the SOG method is formed in a small thickness of about 100[nm] on the protrusion on first layer interconnection 3, and formed in a large thickness of about 30[nm] in the recess between first layer interconnections 3. Then, the whole board is etched to remove the film 4B on the protrusion of the interconnection 3. |
