发明名称 |
Method of backside grinding a bumped wafer |
摘要 |
A method for backside grinding a bumped wafer is disclosed. A wafer has a plurality of bumps formed on the active surface thereof. Prior to grinding the back surface of the wafer, a hot-melt adhesive layer is formed on the active surface of the wafer so as to be adhered to the active surface and cover the bumps. Also a grinding film is attached to the hot-melt adhesive layer. After grinding the back surface of the wafer, the grinding film is removed but the hot-melt adhesive layer is remained on the wafer for the following wafer-dicing step.
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申请公布号 |
US7235426(B2) |
申请公布日期 |
2007.06.26 |
申请号 |
US20040019383 |
申请日期 |
2004.12.23 |
申请人 |
ADVANCED SEMICONDUCTOR ENGINEERING, INC. |
发明人 |
TSAI YU-PEN |
分类号 |
H01L21/00;H01L21/304;H01L21/56;H01L21/78;H01L23/31;H01L25/065 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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