发明名称 Method of backside grinding a bumped wafer
摘要 A method for backside grinding a bumped wafer is disclosed. A wafer has a plurality of bumps formed on the active surface thereof. Prior to grinding the back surface of the wafer, a hot-melt adhesive layer is formed on the active surface of the wafer so as to be adhered to the active surface and cover the bumps. Also a grinding film is attached to the hot-melt adhesive layer. After grinding the back surface of the wafer, the grinding film is removed but the hot-melt adhesive layer is remained on the wafer for the following wafer-dicing step.
申请公布号 US7235426(B2) 申请公布日期 2007.06.26
申请号 US20040019383 申请日期 2004.12.23
申请人 ADVANCED SEMICONDUCTOR ENGINEERING, INC. 发明人 TSAI YU-PEN
分类号 H01L21/00;H01L21/304;H01L21/56;H01L21/78;H01L23/31;H01L25/065 主分类号 H01L21/00
代理机构 代理人
主权项
地址