| 摘要 |
PROBLEM TO BE SOLVED: To make pressure applied on the processing surface of a semiconductor substrate and the pressure applied on the non-processing surface agree approximately in wet etching, wherein the semiconductor substrate is held so that the processing surface is exposed to the outside, and the non-processing surface is exposed in the space that is sealed from the outside in the liquid-tight pattern and immersed in and etching solution. SOLUTION: A substrate 20 is held by substrate holding members 11 and 12 through an O-ring 18, so that a processing surface 20a of the substrate is exposed to the outside and a non-processing surface 20b is exposed in a tightly closed space 16 and immersed into an etching solution. Pressure A corresponding to the depth in the etching solution is applied on the processing surface 20a of the substrate to be processed 20. The pressure in the space 16 of an etching holder 10 is compressed and controlled through a pipeline 13 from the outside, so that pressure B that is equivallent to pressure A is applied to the non- processing surface 20b of the substrate 20.
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